i-cpbjtp

Ubonelelo lwaMandla lweSilicon yePolycrystalline eyi-0~50V 0~5000A

Ingcaciso yeMveliso:

Iinkcukacha:

Iiparamitha zokufaka: isigaba esi-3, AC480V±10%, 60HZ

Iiparameters zemveliso: DC 0~50V 0~5000A

Imo yokuphuma: Imveliso eqhelekileyo yeDC

Indlela yokupholisa: ukupholisa umoya/ukupholisa amanzi

Uhlobo lobonelelo lwamandla: Isekelwe kwi-IGBT

Ishishini lesicelo: Uxinzelelo kunye nokunciphisa i-polycrystalline silicon furnace, ukukhula kwekristale

Ubungakanani bemveliso: 87*82.5*196cm

Ubunzima obupheleleyo: 460kg

Imodeli kunye neDatha

Inombolo yomzekelo

I-ripple yemveliso

Ukuchaneka kwesiboniso sangoku

Ukuchaneka komboniso weVolt

Ukuchaneka kwe-CC/CV

Ukunyuka nokwehla

Ukudubula ngaphezulu

I-GKD50-5000CVC I-VPP≤0.5% ≤10mA ≤10mV ≤10mA/10mV 0~99S No

Izicelo zeMveliso

I-Polysilicon luhlobo lwe-silicon ye-elemental. Xa i-silicon ye-elemental enyibilikisiweyo iqina phantsi kwemeko ye-supercooling, ii-athomu ze-silicon zicwangciswa zibe zii-nuclei ezininzi ze-crystal ngendlela ye-lattice yedayimani. Ukuba ezi nuclei ze-crystal zikhula zibe ziinkozo ezineendlela ezahlukeneyo ze-crystal plane, ezi nkozo ziyadibana ukuze zi-crystallize zibe yi-polycrystalline silicon.

 

Qhagamshelana nathi

(Ungangena kwaye ugcwalise ngokuzenzekelayo.)

Bhala umyalezo wakho apha uze uwuthumele kuthi