Inombolo yomzekelo | Imveliso ripple | Ukuchaneka komboniso wangoku | Ukuchaneka komboniso weVolt | CC/CV Ukuchaneka | I-Ramp-up kunye ne-ramp-down | Ukudubula ngaphezulu |
I-GKD12-600CVC | VPP≤0.5% | ≤10mA | ≤10mV | ≤10mA/10mV | 0~99S | No |
Umbane we-monocrystalline silicon wokufudumeza umbane ngumthombo wamandla aphezulu we-DC, imveliso yamandla enokuthi isetyenziswe ngokuthe ngqo ukufudumeza isifudumezi segraphite kwiziko le-monocrystalline. Yenzelwe ngokukodwa iziko le-silicon elityebileyo kwindawo yeshishini le-semiconductor, lisebenzisa unikezelo lwamandla lwe-DC chopper. Isebenzisa unikezelo lwamandla okuhlaziya ibhulorho enezigaba ezithathu, izixhobo zokuphuma kwe-IGBT chopper, kwaye isebenzisa imo yokulawula ye-PWM ukuphumeza umbane oguqukayo oqhubekayo we-DC.
I-monocrystalline silicon yokufudumeza unikezelo lwamandla ombane wokufudumeza amandla aphezulu e-AC/DC asetyenziselwa ukubonelela amandla kwiheater yegraphite ngaphakathi kwi-monocrystalline silicon furnac.
Umbane we-silicon ye-monocrystalline ukunikezelwa kwamandla okutshintsha okuphakamileyo okuphuhliswe ngokusekwe kwi-inverter ye-high-frequency, ibhuloho ye-phase-shifting epheleleyo, kunye nobuchwepheshe bokulawula i-PWM usebenzisa izixhobo eziphezulu ze-frequency.
(Unako kwakhona Ngena kwaye ugcwalise ngokuzenzekelayo.)