| Inombolo yomzekelo | I-ripple yemveliso | Ukuchaneka kwesiboniso sangoku | Ukuchaneka komboniso weVolt | Ukuchaneka kwe-CC/CV | Ukunyuka nokwehla | Ukudubula ngaphezulu |
| I-GKD12-600CVC | I-VPP≤0.5% | ≤10mA | ≤10mV | ≤10mA/10mV | 0~99S | No |
Umbane wokufudumeza we-silicon furnace ye-monocrystalline ngumthombo wamandla we-DC onamandla aphezulu, amandla aphuma kuwo anokusetyenziswa ngokuthe ngqo ekufudumaleni i-graphite heater kwi-monocrystalline furnace. Yenzelwe ngokukodwa ii-silicon furnace ezixineneyo kwintsimi ye-semiconductor yezimboni, isebenzisa umbane we-DC chopper. Isebenzisa umbane we-bridge rectifier onama-phase amathathu, izixhobo zokukhupha i-IGBT chopper, kwaye isebenzisa imo yolawulo lwe-PWM ukufezekisa i-DC voltage eqhubekayo ehlengahlengiswayo.
Umbane wokufudumeza we-silicon furnace ye-monocrystalline yi-AC/DC converter enamandla aphezulu esetyenziselwa ukubonelela ngamandla kwi-graphite heater ngaphakathi kwi-monocrystalline silicon furnac.
Umbane we-silicon e-monocrystalline lumbane otshintsha rhoqo ophuhliswe ngokusekelwe kwi-inverter etshintsha rhoqo, i-phase-shifting full bridge, kunye netekhnoloji yokulawula i-PWM esebenzisa izixhobo ezisebenzisa rhoqo.
(Ungangena kwaye ugcwalise ngokuzenzekelayo.)